EDES2800
Process specification
- Etch Rate; Si3N4 1500A / Poly 3000A
- Uniformity; <5%(Max-Min)
- Selectivity; To Poly 2:1/ To Oxide 20:1
- 85 Profile & Damage free
- low Micro-loading effect
Design factors
- Gas distribution
- Chamber volume
- Evacuation efficiency
- Wafer area pressure
- Plasma distribution
- Radical ratio
- Surface reaction rate
Experimental factors
- SF6, CF4 => Nitride/Cl2, HBr=>Poly
- Additive gas; CHF3, He, O2, N2
- Pressure
- RF Power
- Chamber & Electrode temperature
Hardware specification
- Foot print; 1072W*1380D*1770H
- Wafer size; 4” to 8”
- Plasma source : CCP
- 2 load station & 2 vacuum load-locks
- High reliable ATM wafer handling ROBOT
- Dual beam wafer mapper
- Non contact wafer pre alignment
- On board Comdel™ 13.56MHz RF generator, Max 600W
- Fast & Fine tune resolution RF Match
- High conductance exhaust throttle valve and heated manifold
- NT base operating software & GUI15” LCD touch monitor
- SECSII/GEM communication
- Ulpa filter over loadstation (option)
- Optical emission Dual Endpoint Detector
